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| IRF840A, SiHF840A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 38 9.0 18 Single D FEATURES 500 0.85 * Low Gate Charge Qg Results in Simple Drive Available Requirement * Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness * Fully Characterized Capacitance and Avalanche Voltage and Current * Effective Coss Specified * Lead (Pb)-free Available TO-220 APPLICATIONS * Switch Mode Power Supply (SMPS) * Uninterruptable Power Supply * High Speed Power Switching S G D S N-Channel MOSFET G TYPICAL SMPS TOPOLOGIES * Two Transistor Forward * Half Bridge * Full Bridge ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRF840APbF SiHF840A-E3 IRF840A SiHF840A ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta TC = 25 C Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw EAS IAR EAR PD dV/dt TJ, Tstg VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM LIMIT 500 30 8.0 5.1 32 1.0 510 8.0 13 125 5.0 - 55 to + 150 300d 10 1.1 W/C mJ A mJ W V/ns C lbf * in N*m A UNIT V Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 C, L = 16 mH, RG = 25 , IAS = 8.0 A (see fig. 12). c. ISD 8.0 A, dI/dt 100 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91065 S-81275-Rev. A, 16-Jun-08 www.vishay.com 1 IRF840A, SiHF840A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.50 MAX. 62 1.0 C/W UNIT SPECIFICATIONS TJ = 25 C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 mA VDS = VGS, ID = 250 A VGS = 30 V VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 125 C VGS = 10 V ID = 4.8 Ab VDS = 50 V, ID = 4.8 Ab 500 2.0 3.7 0.58 - 4.0 100 25 250 0.85 - V V/C V nA A S Ciss Coss Crss Coss Coss Coss eff. Qg Qgs Qgd td(on) tr td(off) tf VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 0 V; VDS = 1.0 V, f = 1.0 MHz VGS = 0 V; VDS = 400 V, f = 1.0 MHz VGS = 0 V; VDS = 0 V to 400 Vc - 1018 155 8.0 1490 42 56 pF VGS = 10 V ID = 8 A, VDS = 400 V, see fig. 6 and 13b VDD = 250 V, ID = 8 A RG = 9.1 , RD = 31 , see fig. 10b - 11 23 26 19 38 9.0 18 ns nC - 422 2.16 8.0 A 32 2.0 633 3.24 V ns C G S TJ = 25 C, IS = 8 A, VGS = 0 Vb TJ = 25 C, IF = 8 A, dI/dt = 100 A/sb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. www.vishay.com 2 Document Number: 91065 S-81275-Rev. A, 16-Jun-08 IRF840A, SiHF840A Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 102 102 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 10 VGS Top 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 4.5 V 10 TJ = 150 C TJ = 25 C 1 1 0.1 0.1 91065_01 20 s Pulse Width TC = 25 C 1 10 102 0.1 4.0 91065_03 20 s Pulse Width VDS = 50 V 5.0 6.0 7.0 8.0 9.0 VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics, TC = 25 C VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics ID, Drain-to-Source Current (A) 10 VGS Top 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V RDS(on), Drain-to-Source On Resistance (Normalized) 102 3.0 2.5 2.0 1.5 1.0 0.5 ID = 8.0 A VGS = 10 V 4.5 V 1 0.1 0.1 91065_02 20 s Pulse Width TC = 150 C 1 10 102 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 150 C 91065_04 TJ, Junction Temperature (C) Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91065 S-81275-Rev. A, 16-Jun-08 www.vishay.com 3 IRF840A, SiHF840A Vishay Siliconix 105 104 ISD, Reverse Drain Current (A) Capacitance (pF) VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Ciss 102 10 TJ = 150 C TJ = 25 C 1 103 102 Coss 10 Crss 1 1 91065_05 0.1 10 102 103 91065_07 VGS = 0 V 0.2 0.5 0.8 1.1 1.4 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage 20 VGS, Gate-to-Source Voltage (V) ID = 8.0 A VDS = 400 V VDS = 250 V 102 Operation in this area limited by RDS(on) 10 s ID, Drain Current (A) 16 VDS = 100 V 10 100 s 1 ms 1 10 ms TC = 25 C TJ = 150 C Single Pulse 10 102 103 104 12 8 4 For test circuit see figure 13 0 0 91065_06 0.1 10 20 30 40 91065_08 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Document Number: 91065 S-81275-Rev. A, 16-Jun-08 IRF840A, SiHF840A Vishay Siliconix VDS VGS 8.0 RG RD D.U.T. + - VDD 10 V ID, Drain Current (A) 6.0 Pulse width 1 s Duty factor 0.1 % 4.0 Fig. 10a - Switching Time Test Circuit 2.0 VDS 90 % 0.0 25 91065_09 50 75 100 125 150 TC, Case Temperature (C) 10 % VGS td(on) tr td(off) tf Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms 10 Thermal Response (ZthJC) 1 0 - 0.5 PDM 0.2 0.1 0.1 0.05 0.02 0.01 10-2 10-5 10-4 Single Pulse (Thermal Response) 10-3 10-2 t1 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 0.1 1 91065_11 t1, Rectangular Pulse Duration (S) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS RG VDS VDS tp VDD D.U.T IAS + - V DD VDS 10 V tp 0.01 IAS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Document Number: 91065 S-81275-Rev. A, 16-Jun-08 www.vishay.com 5 IRF840A, SiHF840A Vishay Siliconix EAS, Single Pulse Avalanche Energy (mJ) 1200 1000 800 600 400 200 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (C) 600 VDSav, Avalanche Voltage (V) ID Top 3.6 A 5.1 A Bottom 8.0 A 580 560 540 520 0.0 91065_12d 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 91065_12c IAV, Avalanche Current (A) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12d - Typical Drain-to-Source Voltage vs. Avalanche Current Current regulator Same type as D.U.T. 50 k 12 V 10 V QGS QG 0.2 F 0.3 F QGD D.U.T. + - VDS VG VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit www.vishay.com 6 Document Number: 91065 S-81275-Rev. A, 16-Jun-08 IRF840A, SiHF840A Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer + + - RG * * * * dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test + VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt VDD Re-applied voltage Inductor current Body diode forward drop Ripple 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91065. Document Number: 91065 S-81275-Rev. A, 16-Jun-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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